FDPF2710T Datasheet, ON Semiconductor

* RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on).

* Consumer Appliances
* Synchronous Rectification DATA SHEET www.onsemi.com VDS 250 V RDS(on) MAX 42.5 mW @ 1.

This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features
* RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A .